Construct an instance of me with a Specs object and then you can call the instance to obtain a dict of appropriate analyzers.

Used by MOSFET_Setups.analyzers.

Method	__init__	Undocumented
Method	TRAN	Adds an `analysis.sim.TRAN` analyzer to my analyzer dict ad for the specified setup ID, with (name, value) tuples for any keywords supplied.
Method	add	Adds an analyzer for setup ID, using the supplied args.
Method	__call__	Call my instance to obtain a dict of appropriate analyzers.
Method	s121	Penalty for unrealistic gate resistance.
Method	s211	DC curve trace: Ids vs Vds for several Vgs.
Method	s212	DC curve trace: Ids vs Vds for several Vgs, with extended Vds.
Method	s213	DC curve trace: Ids vs Vds for several Vgs, at non-nominal Tj.
Method	s220	DC curve trace: Ids vs Vgs with fixed Vds.
Method	s221	DC curve trace: Ids vs Vgs with fixed Vds, possibly at multiple temperatures.
Method	s222	DC curve trace: Ids vs Vgs with fixed Vds, at multiple temperatures.
Method	s223	On-resistance Rds calculated from Ids & Vds, vs Ids, at fixed Vgs.
Method	s231	Undocumented
Method	s241	DC curve trace: Vdd (voltage across MOSFET and drain resistor in series) vs reverse MOSFET voltage, i.e. forward-biased body diode voltage.
Method	s242	DC curve trace: Vdd (voltage across MOSFET and drain resistor in series), Vds, vs Vgs in weak and moderate inversion.
Method	s261	DC curve trace: Ids vs Vdd, with Tj fixed at nominal or stepped.
Method	s262	Undocumented
Method	s271	Undocumented
Method	s272	Undocumented
Method	s321	Gate charge.
Method	s331	Switching time.
Method	s341	Body diode reverse recovery.
Method	s351	Fast turn-on.
Method	s361	Slow turn-on.
Method	s371	Vgs TRAN.
Method	s411	Capacitance measurement: Ciss.
Method	s421	Capacitance measurement: Coss.
Method	s431	Capacitance measurement: Crss.

def __init__(self, s):

Undocumented

def TRAN(self, ID, **kw):

Adds an analysis.sim.TRAN analyzer to my analyzer dict ad for the specified setup ID, with (name, value) tuples for any keywords supplied.

def add(self, ID, *args):

Adds an analyzer for setup ID, using the supplied args.

The args are all concatenated into a list that becomes the entry for that ID. If an arg is a list, its elements are what get concatenated.

def __call__(self):

Call my instance to obtain a dict of appropriate analyzers.

def s121(self, s):

Penalty for unrealistic gate resistance.

def s211(self, s):

DC curve trace: Ids vs Vds for several Vgs.

Most basic setup, always run.

def s212(self, s):

DC curve trace: Ids vs Vds for several Vgs, with extended Vds.

Curve shapes evaluated by StrongInversionAnalyzer.

def s213(self, s):

DC curve trace: Ids vs Vds for several Vgs, at non-nominal Tj.

def s220(self, s):

DC curve trace: Ids vs Vgs with fixed Vds.

Curve shape evaluated by WeakToModerateInversionAnalyzer.

def s221(self, s):

DC curve trace: Ids vs Vgs with fixed Vds, possibly at multiple temperatures.

def s222(self, s):

DC curve trace: Ids vs Vgs with fixed Vds, at multiple temperatures.

Add this analysis setup to setup 221 when the MOSFET datasheet specified an additional set of Ids vs Vgs curves for a different Vds range, and at multiple temperatures.

def s223(self, s):

On-resistance Rds calculated from Ids & Vds, vs Ids, at fixed Vgs.

def s231(self, s):

Undocumented

def s241(self, s):

DC curve trace: Vdd (voltage across MOSFET and drain resistor in series) vs reverse MOSFET voltage, i.e. forward-biased body diode voltage.

From measurements done with an actual device under test.

def s242(self, s):

DC curve trace: Vdd (voltage across MOSFET and drain resistor in series), Vds, vs Vgs in weak and moderate inversion.

From measurements done with an actual device under test.

def s261(self, s):

DC curve trace: Ids vs Vdd, with Tj fixed at nominal or stepped.

def s262(self, s):

Undocumented

def s271(self, s):

Undocumented

def s272(self, s):

Undocumented

def s321(self, s):

Gate charge.

def s331(self, s):

Switching time.

def s341(self, s):

Body diode reverse recovery.

def s351(self, s):

Fast turn-on.

def s361(self, s):

Slow turn-on.

def s371(self, s):

Vgs TRAN.

def s411(self, s):

Capacitance measurement: Ciss.

def s421(self, s):

Capacitance measurement: Coss.

def s431(self, s):

Capacitance measurement: Crss.

API Documentation for pingspice, generated by pydoctor at 2021-09-18 08:41:11.

pingspice.analysis.mosfet_analyzers.Analyzers(object) class documentation

`pingspice.analysis.mosfet_analyzers.Analyzers(object)` class documentation