pingspice.test.analysis.test_mosfet_model.Test_MOSFET_Model(tb.TestCase) class documentation
        
          Part of pingspice.test.analysis.test_mosfet_model
          (View In Hierarchy)
        
      | Method | setUp | Undocumented | 
| Method | makeModel | Undocumented | 
| Method | plot | Undocumented | 
| Method | test_params | Undocumented | 
| Method | test_sameSuffix | Undocumented | 
| Method | test_mv_vacc | Diagram: | 
| Method | test_mv_vacc_PMOS | Undocumented | 
| Method | test_mi_vsat | Diagram: | 
| Method | test_mi_vsat_PMOS | Diagram: | 
| Method | test_mi_vsat_tj | Diagram: | 
| Method | DC_drift_region | Builds a circuit with analysis.mosfet_model.MOSFET_Model.drift_regionand does a DC analysis on it with the supplied args. | 
| Method | test_drift_region_Vds | Internal MOS3 primitive, Vds=V(19)-V(39), saturates at around 274 A, Vds 60V. | 
| Method | test_drift_region_Vds_PMOS | Voltage across V(19,39) of internal MOS3 primitive never goes above about 15 mV. All saturation behavior for this device comes from drift region, at around 108 A. | 
| Method | test_drift_region_Vgs | Undocumented | 
| Method | test_drift_region_Vgs_PMOS | Undocumented | 
| Method | test_drift_region_Vtj | Mobility reduction in drift region with increased temperature, NMOS. | 
| Method | test_drift_region_Vtj_PMOS | Mobility reduction in drift region with increased temperature, PMOS. | 
| Method | DC_channel | Builds a circuit with analysis.mosfet_model.MOSFET_Model.channeland does a DC analysis on it with the supplied args. | 
| Method | test_channel_Vds | Undocumented | 
| Method | test_channel_Vds_PMOS | Undocumented | 
Inherited from MsgBase (via TestCase):
| Method | isVerbose | Undocumented | 
| Method | verboserator | Undocumented | 
| Method | msg | Undocumented | 
Inherited from MsgBase (via TestCase):
| Method | isVerbose | Undocumented | 
| Method | verboserator | Undocumented | 
| Method | msg | Undocumented | 
def test_mv_vacc(self):
Diagram:
       +------+
   +---|- Vd +|-- 17 ----+---------+
   |   +------+          |         |
   0                     |         V
                         |    +---------+
       +----- 291 -------|---x| mv_vacc |-------> mv_vacc
       |                 |    +---------+
    +-----+            +----+      V
    |  +  |            | R1 |      |
    | Vin |            +----+      |
    |  -  |              |         |
    +-----+              +-- 18 ---+
       |                           |
       |                         +----+
       0                         | R2 |
                                 +----+
                                   |
                                   0
def test_mi_vsat(self):
Diagram:
           +------+             +--------+
       +-->| Rsrc |>-- 20 --+-->|+ Vsh  -|>--- 30 -----+
       |   +------+         |   +--------+             |
       |                    |        |                 |
      10                    ^        |                 |
       |                    |        x                 |
    +-----+                 |   +---------+            V
    |  +  |                 +--<|  B:Isat |<---+   +-------+
    | Vin |                     +---------+    |   |       |
    |  -  |                          x x       |   | Rload |
    +-----+     +------+             | |       |   |       |
       |        | 1.0  |----- nmc ---+ |       ^   |       |
       |        |      |               |       |   +-------+
       |        | 25.0 |----- tj ------+       |       V
       |        +------+                       |       |
       |           |                           |       |
       0           0                           0       0
   VTJ tj 0 25.0
   VMAX nmc 0 1.0
   VIN 10 0 0
   R0 10 20 1.0
   VSH 20 30 0
   R1 30 0 1.0
   B0 mv_nmc 0 v=V(nmc)/(0.26+0.74*((V(tj)+273.15)/298.15))
   RB0 mv_nmc 0 1
   B1 0 20 i=i(Vsh) < 0 ? 0 :
   + i(Vsh) > 1000*V(mv_nmc) ? i(Vsh) - V(mv_nmc) :
   + i(Vsh)*(1 - ((1 + (i(Vsh)/V(mv_nmc))^2)^-0.5))
   .END
def test_mi_vsat_PMOS(self):
Diagram:
           +------+             +--------+
       +--<| Rsrc |<-- 20 --+--<|- Vsh  +|<--- 30 -----+
       |   +------+         |   +--------+             |
       |                    |        |                 |
      10                    V        |                 |
       |                    |        x                 |
    +-----+                 |   +---------+            ^
    |  -  |                 +-->|  B:Isat |>---+   +-------+
    | Vin |                     +---------+    |   |       |
    |  +  |                          x x       |   | Rload |
    +-----+     +------+             | |       |   |       |
       |        | 1.0  |----- nmc ---+ |       ^   |       |
       |        |      |               |       |   +-------+
       |        | 25.0 |----- tj ------+       |       ^
       |        +------+                       |       |
       |           |                           |       |
       0           0                           0       0
def test_mi_vsat_tj(self):
Diagram:
           +------+             +--------+
       +-->| Rsrc |>-- 20 --+-->|+ Vsh  -|>--- 30 -----+
       |   +------+         |   +--------+             |
       |                    |        |                 |
      10                    ^        |                 |
       |                    |        x                 |
    +-----+                 |   +---------+            V
    |  +  |                 +--<|  B:Isat |<---+   +-------+
    | Vin |                     +---------+    |   |       |
    |  -  |                          x x       |   | Rload |
    +-----+     +------+             | |       |   |       |
       |        | 1.0  |----- nmc ---+ |       ^   |       |
       |        +------+               |       |   +-------+
       |           |      +-------+    |       |       V
       |           +------|- Vtj +|----+       |       |
       |           |      +-------+            |       |
       0           0                           0       0
Builds a circuit with analysis.mosfet_model.MOSFET_Model.drift_region
and does a DC analysis on it with the supplied args.
Returns a Deferred that fires with the Vectors_Ngspice
object populated with V(10), V(16), and V(19). Also internal node voltage
V(18) between the accumulation and JFET region modeling inside the drift
region.:
                 +-----+
       +-- 10 -->| Rd  |>------- 16 --+
       |         +-----+              |
       |                              V
    +-----+                       +--------+
    |  +  |   +------+            |   .    |
    |     |   |      |            |   . ---|-----------x  18
    | Vin |   | Vgs  |-- 29 --+--x|   .    |
    |     |   | 25.0 |-- Tj --|--x| drift  |
    |  -  |   |      |        |   | region |x-- 39 --+
    +-----+   +------+        |   |   .    |         |
       |         |            |   +--------+         |
       |         0            |       V              |
       |                      |       | 19           |
       |                      |       V              |
       |                      |  +---------+         |
       |                      |  |    D    |         |
       |                      +-x|G (MOS3) |         |
       |                         |  S  B   |         |
       |                         +---------+         |
       |                            V  V             |
       |          +-----+           |  |             |
       +----<-----| Rs  |----- 39 --+--+-------------+
       |          +-----+
       |
       0
| Parameters | Vtj | Fixed Vtj value (default 25.0). | 
| Vds | Fixed Vds value (default 100.0). | |
| Vgs | Fixed Vgs value (default 10.0). | |
| P_channel | Set Truefor P-channel instead of default N-channel. | 
def test_drift_region_Vds(self):
Internal MOS3 primitive, Vds=V(19)-V(39), saturates at around 274 A, Vds 60V.
def test_drift_region_Vds_PMOS(self):
Voltage across V(19,39) of internal MOS3 primitive never goes above about 15 mV. All saturation behavior for this device comes from drift region, at around 108 A.
def test_drift_region_Vtj(self):
Mobility reduction in drift region with increased temperature, NMOS.
def test_drift_region_Vtj_PMOS(self):
Mobility reduction in drift region with increased temperature, PMOS.
Builds a circuit with analysis.mosfet_model.MOSFET_Model.channel
and does a DC analysis on it with the supplied args.
Returns a Deferred that fires with the Vectors_Ngspice
object populated with V(10), V(16), and V(19). Also internal node voltage
V(18) between the accumulation and JFET region modeling inside the drift
region.:
                 +----+          +--------+
       +-- 10 -->| Rd |>-- 16 -->| Rdrift |>--+
       |         +----+          +--------+   |
    +-----+                                   |
    |  +  |                                19 |
    |     |                                   |
    | Vin |                                   |
    |     |                                   V
    |  -  |       +------+               +---------+
    +-----+       |      |               |         |
       |          | Vgs  |-- 29 --------x| channel |
       |          | 25.0 |-- Tj --------x|         |
       |          |      |               +---------+
       |          +------+                    V
       |             |                        |
       |             0                        |
       |                                      |
       |          +-----+                     |
       +----<-----| Rs  |<------------ 39 ----+
       |          +-----+
       |
       0
| Parameters | Vtj | Fixed Vtj value (default 25.0). | 
| Vds | Fixed Vds value (default 100.0). | |
| Vgs | Fixed Vgs value (default 10.0). | |
| P_channel | Set Truefor P-channel instead of default N-channel. | 
